Metal-assisted etching of silicon molds for electroforming

Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables f...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2013-11, Vol.31 (6)
Main Authors: Divan, Ralu, Rosenthal, Dan, Ogando, Karim, Ocola, Leonidas E., Rosenmann, Daniel, Moldovan, Nicolaie
Format: Article
Language:English
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Summary:Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate that the method can be used to fabricate linear Fresnel zone plates.
ISSN:2166-2746
1520-8567
2166-2754
DOI:10.1116/1.4821651