Atomic layer deposition of SiO2 to cap SiO2: Al stacks for modulation acceptor doping of silicon

Modulation acceptor doping (MAD) of silicon through Al-induced acceptor states in SiO2 enables high hole densities without introducing impurities into the Si lattice, but the required uncapped Al-doped SiO2 stack degrades rapidly in air. We demonstrate that an atomic-layer-deposited (ALD) silicon di...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2025-12, Vol.43 (6)
Main Authors: Shams, Somayeh, Seth, Sourabh, Köhler, Thomas, Ratschinski, Ingmar, Hiller, Daniel
Format: Article
Language:English
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