Annealing study of a bistable defect in proton-implanted n-type 4H-SiC

The thermal stability and annealing kinetics of a bistable defect, recently reported by Martin (Master Thesis, KTH/ELE/FTE/2003-1) employing deep level transient spectroscopy and labelled the M-centre, has been studied using n-type epitaxially grown 4H-SiC layers implanted with 2.5MeV protons to a d...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2003-12, Vol.340-342, p.743-747
Main Authors: Nielsen, H.Kortegaard, Martin, D.M., Lévêque, P., Hallén, A., Svensson, B.G.
Format: Article
Language:English
Subjects:
4h silicon-carbide
4H-SiC
Bistable
centers
chemical-vapor-deposition
DLTS
Electrical engineering, electronics and photonics
Electronics
Elektronik
Elektroteknik, elektronik och fotonik
epitaxial layers
Ion implantation
TECHNOLOGY
TEKNIKVETENSKAP
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Summary:The thermal stability and annealing kinetics of a bistable defect, recently reported by Martin (Master Thesis, KTH/ELE/FTE/2003-1) employing deep level transient spectroscopy and labelled the M-centre, has been studied using n-type epitaxially grown 4H-SiC layers implanted with 2.5MeV protons to a dose of 1×1012cm−2. One configuration of the bistable defect leads to two levels in the band gap, 0.42eV (M1) and 0.7–0.8eV (M3) below the conduction band edge (EC), and another leads to one level (M2) at EC-0.7eV. The defect can be switched back and forth between the two configurations by varying the applied bias and the sample temperature. Isochronal and isothermal annealing shows that the defect anneals out between 310°C and 370°C with a first-order kinetics process. The origin of the defect is not known but it is implantation-induced and a low-order complex.
ISSN:0921-4526
1873-2135
1873-2135
DOI:10.1016/j.physb.2003.09.151