Boron-enhanced diffusion in excimer laser annealed Si

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2004-12, Vol.114, p.114-117
• Main Authors: Monakhov, E.V., Svensson, B.G., Linnarsson, M.K., La Magna, A., Privitera, V., Fortunato, G., Mariucci, L.
• Format: Article
• Language: English
• Subjects: Boron-enhanced diffusion; Excimer laser annealing; ion-implantation; silicon; Transient enhanced diffusion
• ISSN: 0921-5107; 1873-4944; 1873-4944
• DOI: 10.1016/j.mseb.2004.07.015

The effect of excimer laser annealing (ELA) and rapid thermal annealing (RTA) on B redistribution in B-implanted Si has been studied by secondary ion mass spectrometry (SIMS) and spreading resistance probe (SRP). B has been implanted with an energy of 1 keV and a dose of 10 16 cm −2 forming a distribution with a width of 20–30 nm and a peak concentration of ∼5 × 10 21 cm −3. It has been found that ELA with 10 pulses of the energy density of 850 mJ/cm 2 results in a uniform B distribution over the ELA-molten region with an abrupt profile edge. SRP measurements demonstrate good activation of the implanted B after ELA, with the concentration of the activated fraction (∼10 21 cm −3) exceeding the solid solubility level. RTA (30 s at 1100 °C) of the as-implanted and ELA-treated samples leads to a diffusion of B with diffusivities exceeding the equilibrium one and the enhancement is similar for both of the samples. It is also found that RTA decreases the activated B in the ELA-treated sample to the solid solubility limit (2 × 10 20 cm −3). The similarity of the B diffusivity for the as-implanted and ELA-treated samples suggests that the enhancement of the B diffusivity is due to the so-called boron-enhanced diffusion (BED). Possible mechanisms of BED are discussed.