Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2021-02, Vol.218 (3), p.n/a
• Main Authors: Strömberg, Axel, Bhargava, Prakhar, Xu, Zhehan, Lourdudoss, Sebastian, Sun, Yan-Ting
• Format: Article
• Language: English
• Subjects: Buffer layers; Cost effectiveness; Crystal qualities; Crystalline quality; Defects; Device application; Epitaxial growth; Gallium arsenide; Gallium phosphide; Gallium phosphides; heteroepitaxy; hydride vapor phase epitaxy; Hydrides; III-V semiconductors; III–V/Si integration; Morphology; Nanocrystalline materials; Nucleation; Nucleation temperature; Photoluminescence; Photoluminescence mapping; Photonic devices; selective area growth; Selectivity; Semiconducting gallium; Silicon compounds; Silicon substrates; Spatially resolved; vapor mixing epitaxy; Vapor phase epitaxy; Vapor phases
• ISSN: 1862-6300; 1862-6319; 1862-6319
• DOI: 10.1002/pssa.202000447

Direct heteroepitaxy and selective area growth (SAG) of GaP and GaAs on Si(100) and Si(111) are implemented by low‐pressure hydride vapor phase epitaxy (LP‐HVPE), which are facilitated by buffer layers grown at 410–490 °C with reactive gas mixing directly above Si substrates. High‐density islands observed on GaP buffer layers on Si result in rough morphology and defect formation in the subsequent GaP layers grown at 715 °C. The impact of growth temperature of GaAs buffer layers on the crystal quality of GaAs/Si is studied. A decreased nucleation temperature significantly improves the morphology and crystalline quality of the overall GaAs growth on Si. It is observed that Si(111) substrates are favorable for both GaP and GaAs growths in comparison with Si(100). In SAGs of GaP/Si and GaAs/Si, the high selectivity innate to HVPE is maintained in the used unconventional growth regime. The spatially resolved photoluminescence mapping reveals the material quality of GaAs/Si is enhanced by defect filtering by SAG. The outcomes of this work will pave the way of III–V/Si integration realized by cost‐effective HVPE for photonic device applications. GaP and GaAs are grown on planar and patterned Si (100) and (111) substrates by hydride vapor phase epitaxy by exploiting the low‐temperature buffer layer growth in a vapor mixing fashion. Si(111) is favorable for high crystal quality growth of GaAs and GaP. A reduced defect density in III–V semiconductors is observed in the growth on patterned Si.