Formation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devices

Control of the growth front in three-dimensional (3D) hexagonal GaN core structures is crucial for increased performance of light-emitting diodes (LEDs), and other photonic devices. This is due to the fact that InGaN layers formed on different growth facets in 3D structures exhibit various band gaps...

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Bibliographic Details
Published in:Scientific reports 2017-08, Vol.7 (1), p.9356-7, Article 9356
Main Authors: Lim, Seung-Hyuk, Sim, Young Chul, Yoo, Yang-Seok, Choi, Sunghan, Lee, Sangwon, Cho, Yong-Hoon
Format: Article
Language:English
Subjects:
142/126
639/301/357/537
639/624/1020/1089
Growth conditions
Growth rate
Humanities and Social Sciences
multidisciplinary
Photovoltaic cells
Photovoltaics
Science
Science (multidisciplinary)
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Summary:Control of the growth front in three-dimensional (3D) hexagonal GaN core structures is crucial for increased performance of light-emitting diodes (LEDs), and other photonic devices. This is due to the fact that InGaN layers formed on different growth facets in 3D structures exhibit various band gaps which originate from differences in the indium-incorporation efficiency, internal polarization, and growth rate. Here, a -plane { 11 2 ¯ 0 } facets, which are rarely formed in hexagonal pyramid based growth, are intentionally fabricated using mask patterns and adjustment of the core growth conditions. Moreover, the growth area covered by these facets is modified by changing the growth time. The origin of the formation of a -plane { 11 2 ¯ 0 } facets is also discussed. Furthermore, due to a growth condition transition from a 3D core structure to an InGaN multi-quantum well, a growth front transformation (i.e., a transformation of a -plane { 11 2 ¯ 0 } facets to semi-polar { 11 2 ¯ 2 } facets) is directly observed. Based on our understanding and control of this novel growth mechanism, we can achieve efficient broadband LEDs or photovoltaic cells.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-017-09782-1