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Transition metal-catalysed molecular n-doping of organic semiconductors
Chemical doping is a key process for investigating charge transport in organic semiconductors and improving certain (opto)electronic devices 1 – 9 . N(electron)-doping is fundamentally more challenging than p(hole)-doping and typically achieves a very low doping efficiency ( η ) of less than 10% 1 ,...
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Published in: | Nature (London) 2021-11, Vol.599 (7883), p.67-73 |
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Main Authors: | , , , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Chemical doping is a key process for investigating charge transport in organic semiconductors and improving certain (opto)electronic devices
1
–
9
. N(electron)-doping is fundamentally more challenging than p(hole)-doping and typically achieves a very low doping efficiency (
η
) of less than 10%
1
,
10
. An efficient molecular n-dopant should simultaneously exhibit a high reducing power and air stability for broad applicability
1
,
5
,
6
,
9
,
11
, which is very challenging. Here we show a general concept of catalysed n-doping of organic semiconductors using air-stable precursor-type molecular dopants. Incorporation of a transition metal (for example, Pt, Au, Pd) as vapour-deposited nanoparticles or solution-processable organometallic complexes (for example, Pd
2
(dba)
3
) catalyses the reaction, as assessed by experimental and theoretical evidence, enabling greatly increased
η
in a much shorter doping time and high electrical conductivities (above 100 S cm
−1
; ref.
12
). This methodology has technological implications for realizing improved semiconductor devices and offers a broad exploration space of ternary systems comprising catalysts, molecular dopants and semiconductors, thus opening new opportunities in n-doping research and applications
12
,
13
.
Electron doping of organic semiconductors is typically inefficient, but here a precursor molecular dopant is used to deliver higher n-doping efficiency in a much shorter doping time. |
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ISSN: | 0028-0836 1476-4687 1476-4687 |
DOI: | 10.1038/s41586-021-03942-0 |