Bipolar resistive switching with multiple intermediate resistance states in Mn3O4 thin film

• Published in: Materials today communications 2023-03, Vol.34, p.105484, Article 105484
• Main Authors: Pandey, Vidit, Adiba, Adiba, Nehla, Priyanka, Munjal, Sandeep, Ahmad, Tufail
• Format: Article
• Language: English
• Subjects: Gradual RESET; Mn3O4 thin film; Ohmic; Resistive switching; Schottky
• ISSN: 2352-4928; 2352-4928
• DOI: 10.1016/j.mtcomm.2023.105484

The research on resistive switching phenomenon-based memory devices has become an important topic in computing and data storage technology. In this study, bipolar resistive switching based Al/Mn3O4/FTO RRAM device with multi-level resistance states has been investigated. The current-voltage and resistance-temperature analyses were performed to explore the behavior and conduction mechanisms of the fabricated RRAM device. A gradual RESET was obtained during the switching from a high resistance state to a low resistance state with three intermediate resistance states at different stop voltages. The program/erase and data retention tests were performed to investigate the stability, uniform switching, and non-volatile behavior of the fabricated device. A schematic representation of the formation of conducting filamentary path between the top and bottom electrodes has also been illustrated. The fabricated RRAM device has the potential to fulfill the requirements for application in high-density non-volatile memory devices. [Display omitted] •Bipolar resistive switching with stable multiple resistance states demonstrated in Mn3O4 thin film.•Fabricated RRAM device shows gradual RESET, low power consumption, good stability, and non-volatile characteristics.•Ohmic, hopping, and Schottky emission act as conduction mechanisms.