Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit

2D ferroelectric material has emerged as an attractive building block for high‐density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking...

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Bibliographic Details
Published in:Advanced functional materials 2018-12, Vol.28 (50), p.n/a
Main Authors: Xue, Fei, Hu, Weijin, Lee, Ko‐Chun, Lu, Li‐Syuan, Zhang, Junwei, Tang, Hao‐Ling, Han, Ali, Hsu, Wei‐Ting, Tu, Shaobo, Chang, Wen‐Hao, Lien, Chen‐Hsin, He, Jr‐Hau, Zhang, Zhidong, Li, Lain‐Jong, Zhang, Xixiang
Format: Article
Language:English
Subjects:
Bilayers
Data storage
Ferroelectric materials
Ferroelectricity
Heterostructures
hexagonal α‐In2Se3
Hysteresis loops
Induced polarization
layered 2D materials
Materials science
Mathematical analysis
monolayer
Monolayers
Nanoelectronics
Nanotechnology devices
Optoelectronics
Room temperature
room‐temperature ferroelectricity
Thickness
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