Investigation of Back Surface Field Layer for High Efficiency Ultrathin In2S3 based CIGS Solar Cell

• Published in: Advanced theory and simulations 2024-11, Vol.7 (11), p.n/a
• Main Authors: Robin, Mohammad Sijanur Rahaman, Rahman, Md. Mizanur
• Format: Article
• Language: English
• Subjects: absorber layer; BSF; CIGS; efficiency; In2S3
• ISSN: 2513-0390; 2513-0390
• DOI: 10.1002/adts.202400364

A comprehensive study of a novel structure for In2S3 based CIGS solar cell has been observed. The effects of the absorber layer and temperature with various back surface field (BSF) layers (SnS/SnTe/MoTe2/GeTe) are analyzed with the SCAPS‐1D simulator. Performances of the ultrathin CIGS solar cell enhanced with the proposed structure of ZnO:Al/i‐ZnO/In2S3/CIGS/BSF/Mo and efficiency reached over 24% with 1000 nm CIGS absorber layer. The cell with SnS BSF layer has obtained 24.41% efficiency but shows less stability with temperature variation. On the other hand, the cell with MoTe2 BSF shows better stability at a higher temperature and reached an efficiency of 24.14%. Besides, the cell with SnTe BSF also suitable for ultrathin In2S3/CIGS, which results in an efficiency of 23.27%. However, the cell with GeTe BSF can give just over 18% efficiency, but it shows greater stability with temperature changes. This study highlights the potential of BSF layer in In2S3/CIGS solar cell enhancing the performance and stability of cells by reducing recombination losses. The incorporation of a 50 nm BSF layer allows further thinning of the absorber layer, reducing material consumption in the fabrication process without sacrificing overall efficiency. This comprehensive study highlights the potential of incorporating a 50 nm BSF layer (SnS/SnTe/MoTe2/GeTe in In2S3/CIGS solar cell enhancing the performance and stability of cells by reducing recombination losses. The incorporation of a 50 nm BSF layer allows further thinning of the absorber layer and obtained 24.41% efficiency with SnS, 24.14% with MoTe2, 23.27% with SnTe, and 18.05% with GeTe.