Graphene FETs with high and low mobilities have universal temperature-dependent properties

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,Vg, for a series of monolayer graphene field effect transistors with mobilities,μ, ranging between 5000 and 250 000 cm2V-1s-1...

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Bibliographic Details
Main Authors: Jonathan H. Gosling, Sergey V. Morozov, Evgenii E. Vdovin, Mark Greenaway, Yurii N. Khanin, Zakhar Kudrynskyi, Amalia Patanè, Laurence Eaves, Lyudmila Turyanska, T. Mark Fromhold, Oleg Makarovsky
Format: Default Article
Published: 2023
Subjects:
Classical physics not elsewhere classified
Nanoscience & Nanotechnology
graphene
convolution model
charged impurities
electrical properties
Online Access:https://hdl.handle.net/2134/21909150.v1
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