Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors

Tantalum oxide memristors can switch continuously from a low-conductance semiconducting to a high-conductance metallic state. At the boundary between these two regimes are quantized conductance states, which indicate the formation of a point contact within the oxide characterized by multistable cond...

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Bibliographic Details
Main Authors: Wei Yi, Sergey Saveliev, Gilberto Medeiros-Ribeiro, Feng Miao, M.-X. Zhang, J. Joshua Yang, A.M. Bratkovsky, R.S. Williams
Format: Default Article
Published: 2016
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Online Access:https://hdl.handle.net/2134/21047
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