Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
Tantalum oxide memristors can switch continuously from a low-conductance semiconducting to a high-conductance metallic state. At the boundary between these two regimes are quantized conductance states, which indicate the formation of a point contact within the oxide characterized by multistable cond...
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| Main Authors: | , , , , , , , |
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| Format: | Default Article |
| Published: |
2016
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| Subjects: | |
| Online Access: | https://hdl.handle.net/2134/21047 |
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