Control of the properties of semiconducting thin films deposited using magnetron sputtering
The objective of the work was to deposit semiconducting thin films with controlled properties using unbalanced reactive magnetron sputtering. It was decided to utilise this technique because it offers high deposition rate and controllable in-situ ion bombardment of the growing film, desirable attrib...
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| Format: | Default Thesis |
| Published: |
1993
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| Online Access: | https://hdl.handle.net/2134/12927 |
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