Extraordinary magnetoresistance: sensing the future

Simulations utilising the finite element method (FEM) have been produced in order to investigate aspects of circular extraordinary magnetoresistance (EMR) devices. The effect of three specific features on the resultant magnetoresistance were investigated: the ratio of the metallic to semiconducting...

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Bibliographic Details
Main Authors: Thomas H. Hewett, Feodor Kusmartsev
Format: Default Article
Published: 2012
Subjects:
Other physical sciences not elsewhere classified
Extraordinary magnetoresistance
Interface resistance
Magnetotransport
Graphene
Physical Sciences not elsewhere classified
Online Access:https://hdl.handle.net/2134/12740
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