Electrical overstress and electrostatic discharge failure in silicon MOS devices

This thesis presents an experimental and theoretical investigation of electrical failure in MOS structures, with a particular emphasis on short-pulse and ESD failure. It begins with an extensive survey of MOS technology, its failure mechanisms and protection schemes. A program of experimental resear...

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Bibliographic Details
Main Author: Martin J. Tunnicliffe
Format: Default Thesis
Published: 1993
Subjects:
Online Access:https://hdl.handle.net/2134/7304
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