Electrical overstress and electrostatic discharge failure in silicon MOS devices
This thesis presents an experimental and theoretical investigation of electrical failure in MOS structures, with a particular emphasis on short-pulse and ESD failure. It begins with an extensive survey of MOS technology, its failure mechanisms and protection schemes. A program of experimental resear...
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| Format: | Default Thesis |
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1993
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| Online Access: | https://hdl.handle.net/2134/7304 |
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