A theoretical study of the hole mobility in silicon–germanium heterostructures

The incorporation of Si1-xGex alloy heterostructures into conventional Si processes has been proposed as a means of improving the operating frequency and overall performance of Si field effect transistors. One parameter expected to benefit from this approach is the hole mobility, which would have im...

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Bibliographic Details

Main Author:	Adrian I. Horrell
Format:	Default Thesis
Published:	2001
Subjects:	Mechanical engineering not elsewhere classified untagged Mechanical Engineering not elsewhere classified
Online Access:	https://hdl.handle.net/2134/34855
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