Failure mechanisms in MOS devices

Continuous and pulsed voltage stressmg of metal oxide semiconductor (MOS) transistors and capacitors has been mvestigated. The expenmental work followed a survey of failure mechanisms in semiconductor devices which Identified Electrical Overstress Damage (EOS)/Electrostatic Discharge (ESD) damage as...

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Bibliographic Details

Main Author:	Ekanayake A. Amerasekera
Format:	Default Thesis
Published:	1986
Subjects:	Mechanical engineering not elsewhere classified untagged Mechanical Engineering not elsewhere classified
Online Access:	https://hdl.handle.net/2134/11005
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