Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN–AlN buffer layer

The structural properties of 2 mm thick N-face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited the propagation...

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Main Authors:	G.P. Dimitrakopulos, T. Kehagias, A. Ajagunna, J. Kioseoglou, Danis Kerasiotis, G. Nouet, A.P. Vajpeyi, T. Karakostas
Format:	Default Article
Published:	2010
Subjects:	Mechanical engineering not elsewhere classified Condensed matter physics not elsewhere classified untagged Mechanical Engineering not elsewhere classified Condensed Matter Physics
Online Access:	https://hdl.handle.net/2134/20261
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