An atomistic study of copper extrusion in through-silicon-via using phase field crystal models
Three-dimensional system integration using Cu through-silicon-via (TSV) technology enables vertical interconnection of stacked dies. However, the large statistical distribution of plastic Cu extrusion, also known as Cu pumping, presents a serious reliability concern. Traditional finite element metho...
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| Main Authors: | , , , , |
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| Format: | Default Conference proceeding |
| Published: |
2016
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| Subjects: | |
| Online Access: | https://hdl.handle.net/2134/26836 |
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