An atomistic study of copper extrusion in through-silicon-via using phase field crystal models

Three-dimensional system integration using Cu through-silicon-via (TSV) technology enables vertical interconnection of stacked dies. However, the large statistical distribution of plastic Cu extrusion, also known as Cu pumping, presents a serious reliability concern. Traditional finite element metho...

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Bibliographic Details
Main Authors: Zhiheng Huang, Jinxin Liu, Paul Conway, Zhuojun Hu, Yang Liu
Format: Default Conference proceeding
Published: 2016
Subjects:
Online Access:https://hdl.handle.net/2134/26836
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