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Mechanisms of copper protrusion in through-silicon-via structures at the nanoscale
Thermal stress-induced copper protrusion is frequently observed in through-silicon-vias (TSVs) based three-dimensional (3D) system integration. In this study, the detailed process of Cu protrusion is reproduced on the atomic scale using a two-mode phase-field-crystal (PFC) model, and the mechanisms...
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Main Authors: | , , , |
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Format: | Default Article |
Published: |
2018
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Subjects: | |
Online Access: | https://hdl.handle.net/2134/35406 |
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