Modelling of realistic annealing behaviour of amorphous silicon photovoltaic devices
Long-term degradation and annealing behaviour of a-Si mini-modules is investigated in this paper. Four devices were firstly degraded by light and then annealed in the dark at temperatures ranging from 65-85°C. Dark annealing rates were obtained for each temperature. Further annealing with light bias...
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| Main Authors: | , , , |
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| Format: | Default Conference proceeding |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/2134/17846 |
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