Incorporation of copper into indium gallium selenide layers from solution

A chemical method for the incorporation of copper into indium gallium selenide (IGS) layers has been developed. The resulting copper-containing precursor layers have been annealed in the presence of selenium vapour with the goal of forming Cu(In, Ga)Se2 (CIGS) layers. It is found that copper ions in...

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Bibliographic Details

Main Authors:	Christopher J. Hibberd, J. Ganchev, M. Kaelin, K.E. Ernits, A.N. Tiwari
Format:	Default Conference proceeding
Published:	2008
Subjects:	Mechanical engineering not elsewhere classified untagged Mechanical Engineering not elsewhere classified
Online Access:	https://hdl.handle.net/2134/4892
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