Polycrystalline CdSeTe/CdTe absorber cells with 28 mA/cm2 short-circuit current

An 800-nm CdSeTe layer was added to the CdTe absorber used in high-efficiency CdTe cells to increase the current and produce an increase in efficiency. The CdSeTe layer employed had a band gap near 1.41 eV, compared to 1.5 eV for CdTe. This lower band-gap allowed a current increase from approximatel...

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Bibliographic Details

Main Authors:	Amit Munshi, Jason M. Kephart, Ali Abbas, John Raguse, Jean-Nicolas Beaudry, Kurt L. Barth, James Sites, Michael Walls, Walajabad S. Sampath
Format:	Default Conference proceeding
Published:	2017
Subjects:	Mechanical engineering not elsewhere classified Foundations of quantum mechanics untagged Mechanical Engineering not elsewhere classified Quantum Mechanics
Online Access:	https://hdl.handle.net/2134/27442
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