Passivation of silicon wafers by Silicon Carbide (SiCx) thin film grown by sputtering

Silicon Carbide films for silicon solar cell application were deposited by means of RF sputtering process. Films were deposited from mixed Silicon – Graphite target onto silicon Cz wafers. Samples were characterized by Photo Conductance Decay (PCD) method to measure the effective lifetime. The thic...

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Bibliographic Details
Main Authors: Piotr Kaminski, Ali Abbas, Kevin Bass, Gianfranco Claudio
Format: Default Article
Published: 2011
Subjects:
Mechanical engineering not elsewhere classified
Silicon carbide
Surface passivation
Sputtering
Minority carrier liftime
Mechanical Engineering not elsewhere classified
Online Access:https://hdl.handle.net/2134/17598
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