Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm2 Short-Circuit Current

IEEE An 800 nm CdSeTe layer was added to the CdTe absorber used in high-efficiency CdTe cells to increase the current and produce an increase in efficiency. The CdSeTe layer employed had a band-gap near 1.41 eV, compared with 1.5 eV for CdTe. This lower band-gap enabled a current density increase fr...

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Bibliographic Details
Main Authors: Amit Munshi, Jason M. Kephart, Ali Abbas, John Raguse, Jean-Nicolas Beaudry, Kurt L. Barth, James Sites, Michael Walls, Walajabad S. Sampath
Format: Default Article
Published: 2017
Subjects:
Mechanical engineering not elsewhere classified
Foundations of quantum mechanics
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Mechanical Engineering not elsewhere classified
Quantum Mechanics
Online Access:https://hdl.handle.net/2134/32170
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https://hdl.handle.net/2134/32170

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