Gate oxide failure in MOS devices

The thesis presents an experimental and theoretical investigation of gate oxide breakdown in MOS networks, with a particular emphasis on constant voltage overstress failure. It begins with a literature search on gate oxide failure mechanisms, particularly time-dependent dielectric breakdown, in MOS...

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Bibliographic Details

Main Author:	Liqin Dong
Format:	Default Thesis
Published:	1994
Subjects:	Mechanical engineering not elsewhere classified untagged Mechanical Engineering not elsewhere classified
Online Access:	https://hdl.handle.net/2134/33072
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